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| PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 SILICON DARLINGTON POWER TRANSISTORS The BD676-BD678-BD680-BD682 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD675-BD677-BD679-BD681 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO Collector-Emitter Voltage Ratings BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 -IC -ICM -IBM @ Tmb = 25C Value 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 Unit V -VCBO -VEBO Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature V V A A Watts C C -IC -IB PT TJ TStg THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1 PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= -VCBOMAX=45 V IE=0 , -VCB= -VCBOMAX=60 V IE=0 , -VCB= -VCBOMAX=80 V IE=0 , -VCB= -VCBOMAX=100 V IE=0 , -VCB= -1/2VCBOMAX= 45V,Tj= 150C IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150C IE=0 , -VCB= -1/2VCBOMAX= 80V,Tj= 150C IE=0 , -VCB= -1/2VCBOMAX= 100V,Tj= 150C IB=0 , -VCE= -1/2VCEOMAX=60 V IC=0, -VEB=5 V -IC=1.5 A, -IB=6 mA -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 Min Typ 750 10 0,8 2200 650 60 1,5 0,3 1,5 M Unit x 0,2 0,2 0,2 0,2 1 1 1 1 0,2 0,2 0,2 0,2 5 2,5 2,5 1.5 5 mA -ICBO Collector cut-off current -ICEO -IEBO -VCE(SAT) hFE -VBE hfe fhfe VF Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain mA mA V Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP <300s, <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. V kHz V A s COMSET SEMICONDUCTORS 2 MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Pin 1 : Pin 2 : Case : Emitter Collector Base COMSET SEMICONDUCTORS 3 |
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